unisonic technologies co., ltd 2sa1012 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r203-015,h high current switching application . ? features *low collector saturation voltage v ce(sat) =-0.4v(max.) at ic=-3a *high speed switching time: t s =1.0 s(typ.) *complementary to 2sc2562 ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing 2sa1012l-x-ta3-t 2SA1012G-X-TA3-T to-220 b c e tube 2sa1012l-x-tf3-t 2sa1012g-x-tf3-t to-220f b c e tube 2sa1012l-x-tm3-t 2sa1012g-x-tm3-t to-251 b c e tube 2sa1012l-x-tn3-r 2sa1012g-x-tn3-r to-252 b c e tape reel 2sa1012l-x-tn3-t 2sa1012g-x-tn3-t to-252 b c e tube
2sa1012 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-015,h ? absolute maximum ratings (ta = 25 ) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v collector-emitter voltage v ebo -5 v peak collector current i c -5 a power dissipation p d 25 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta= 25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100 a, i e =0 -60 v collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0 -50 v emitter-base breakdown voltage bv ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -1.0 a emitter cut-off current i ebo v eb =-5v, i c =0 -1.0 a h fe1 v ce =-1v, i c =-1a 70 360 dc current gain h fe2 v ce =-1v, i c =-3a 30 collector-emitter satu ration voltage v ce (sat) i c =-3a, i b =-0.15a -0.2 -0.4 v base-emitter satura tion voltage v be (sat) i c =-3a, i b =-0.15a -0.9 -1.2 v transition frequency f t v ce =-4v, i c =-1a 60 mhz collector output capacitance cob v cb =-10v, i e =0, f=1mhz 170 pf turn-on time t on 0.1 s storage time t s 1.0 s switching time fall time t f 0.1 s ? classification of h fe1 rank o y r range 70 ~ 140 120 ~ 240 180 ~ 360
2sa1012 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-015,h typical characteristics
2sa1012 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-015,h ? typical characterics (cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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